protection products 1 www.semtech.com protection products - microclamp tm UCLAMP3301P low voltage clamp tm for esd and cde protection description features dimensions schematic & pin configuration revision 2/15/2008 the clamp tm series of transient voltage suppressors (tvs) are designed to replace multilayer varistors (mlvs) in portable applications such as cell phones, notebook computers, and pdas. they offer superior electrical characteristics such as lower clamping voltage and no device degradation when compared to mlvs. they are designed to protect sensitive semicon- ductor components from damage or upset due to electrostatic discharge (esd), lightning, electrical fast transients (eft), and cable discharge events (cde). the clamp tm 3301p is constructed using semtech?s proprietary epd process technology. the epd process provides low standoff voltages with significant reduc- tions in leakage currents and capacitance over silicon- avalanche diode processes. they feature a true operating voltage of 3.3 volts for superior protection when compared to traditional pn junction devices. the clamp tm 3301p is in an 2-pin, rohs/weee compli- ant, slp1006p2 package. it measures 1.0 x 0.6 x 0.5mm. the leads are spaced at a pitch of 0.65mm and are finished with lead-free nipdau. each device will protect one line operating at 3.3 volts. it gives the designer the flexibility to protect single lines in applica- tions where arrays are not practical. they may be used to meet the esd immunity requirements of iec 61000- 4-2, level 4 (15kv air, 8kv contact discharge). the combination of small size and high esd surge capability makes them ideal for use in portable applications such as cellular phones, digital cameras, and mp3 players. applications mechanical characteristics ? cellular handsets & accessories ? personal digital assistants (pdas) ? notebooks & handhelds ? portable instrumentation ? digital cameras ? peripherals ? mp3 players ? transient protection for data lines to iec 61000-4-2 (esd) 15kv (air), 8kv (contact) iec 61000-4-4 (eft) 40a (tp = 5/50ns) cable discharge event (cde) ? ultra-small package (1.0 x 0.6 x 0.5mm) ? protects one data line ? low clamping voltage ? working voltage: 3.3v ? low leakage current ? solid-state silicon-avalanche technology ? slp1006p2 package ? rohs/weee compliant ? nominal dimensions: 1.0 x 0.6 x 0.5 mm ? lead finish: nipdau ? molding compound flammability rating: ul 94v-0 ? marking: marking code, cathode band ? packaging: tape and reel slp1006p2 (bottom view) maximum dimensions (mm) 0.65 0.50 0.60 1.0 1 2
2 ? 2008 semtech corp. www.semtech.com protection products UCLAMP3301P absolute maximum rating electrical characteristics (t=25 o c) r e t e m a r a pl o b m y ss n o i t i d n o cm u m i n i ml a c i p y tm u m i x a ms t i n u e g a t l o v f f o - d n a t s e s r e v e rv m w r 3 . 3v e g a t l o v h g u o r h t - h c n u pv t p i t p a 2 =5 . 39 . 36 . 4v e g a t l o v k c a b - p a n sv b s i b s a m 0 5 =8 . 2v t n e r r u c e g a k a e l e s r e v e ri r v m w r v 3 . 3 =5 0 . 05 . 0a e g a t l o v g n i p m a l cv c i p p s 0 2 / 8 = p t , a 1 =5 . 5v e g a t l o v g n i p m a l cv c i p p s 0 2 / 8 = p t , a 5 =0 . 8v e g a t l o v g n i p m a l c e s r e v e rv r c i p p s 0 2 / 8 = p t , a 1 =4 . 2v e c n a t i c a p a c n o i t c n u jc j d n g o t n i p o / i v r z h m 1 = f , v 0 = 5 20 3f p d n g o t n i p o / i v r z h m 1 = f , v 3 . 3 = 4 1f p g n i t a rl o b m y se u l a vs t i n u ) s 0 2 / 8 = p t ( r e w o p e s l u p k a e pp k p 0 4s t t a w ( t n e r r u c e s l u p k a e p m u m i x a m) s 0 2 / 8 = p ti p p 5s p m a ) r i a ( 2 - 4 - 0 0 0 1 6 c e i r e p d s e ) t c a t n o c ( 2 - 4 - 0 0 0 1 6 c e i r e p d s e v d s e 0 2 - / + 5 1 - / + v k e r u t a r e p m e t g n i t a r e p ot j 5 8 + o t 0 4 -c e r u t a r e p m e t e g a r o t st g t s 0 5 1 + o t 5 5 -c
3 ? 2008 semtech corp. www.semtech.com protection products UCLAMP3301P typical characteristics non-repetitive peak pulse power vs. pulse time power derating curve clamping voltage vs. peak pulse current normalized junction capacitance vs. reverse voltage insertion loss s21 esd clamping (8kv contact per iec 61000-4-2) 0 2 4 6 8 10 12 012345 peak pulse current - i pp (a) clamping voltage - v c (v) waveform parameters: tr = 8 s td = 20 s 0 0.2 0.4 0.6 0.8 1 1.2 00.511.522.533.5 reverse voltage - v r (v) cj(vr) / cj(vr=0v) f = 1 mhz 1 2 3 4 start . 030 mhz 3 stop 000 . 000 000 mhz ch1 s21 log 6 db / ref 0 db 1: -9.2069 db 900 mhz 2: -12.958 db 1.8 ghz 3: -11.689 db 2.5 ghz 4: -3.0358 db 227mhz 0 db -6 db -12 db -18 db -24 db -30 db -36 db 1 ghz 100 mhz 3 ghz 10 mhz 1 mhz 0 10 20 30 40 50 60 70 80 90 100 110 0 25 50 75 100 125 150 ambient temperature - t a ( o c) % of rated power or i pp 0.01 0.1 1 0.1 1 10 100 1000 pulse duration - tp (s) peak pulse power - p pp (kw) note: data is taken with a 10x attenuator
4 ? 2008 semtech corp. www.semtech.com protection products UCLAMP3301P device connection options the clamp3301p is designed to protect one data or i/o line operating at 3.3 volts. it will present a high impedance to the protected line up to 3.3 volts. it will ?turn on? when the line voltage exceeds 3.5 volts. the device is unidirectional and may be used on lines where the signal polarity is above ground. the cathode band should be placed towards the line that is to be protected. these devices should not be connected to dc supply rails as they can latch up as described below. due to the ?snap-back? characteristics of the low voltage tvs, it is not recommended that the i/o line be directly connected to a dc source greater than snap- back votlage (v sb ) as the device can latch on as described below. epd tvs characteristics the clamp3301p is constructed using semtech?s proprietary epd technology. the structure of the epd tvs is vastly different from the traditional pn-junction devices. at voltages below 5v, high leakage current and junction capacitance render conventional ava- lanche technology impractical for most applications. however, by utilizing the epd technology, the clamp3301p can effectively operate at 3.3v while maintaining excellent electrical characteristics. the epd tvs employs a complex nppn structure in contrast to the pn structure normally found in tradi- tional silicon-avalanche tvs diodes. since the epd tvs devices use a 4-layer structure, they exhibit a slightly different iv characteristic curve when compared to conventional devices. during normal operation, the device represents a high-impedance to the circuit up to the device working voltage (v rwm ). during an esd event, the device will begin to conduct and will enter a low impedance state when the punch through voltage (v pt ) is exceeded. unlike a conventional device, the low voltage tvs will exhibit a slight negative resistance characteristic as it conducts current. this characteris- tic aids in lowering the clamping voltage of the device, but must be considered in applications where dc voltages are present. when the tvs is conducting current, it will exhibit a slight ?snap-back? or negative resistance characteris- applications information device schematic & pin configuration i pp i sb i pt i r v rwm v v pt v c v f i f sb epd tvs iv characteristic curve pin 2 pin 1 tics due to its structures. this point is defined on the curve by the snap-back voltage (v sb ) and snap-back current (i sb ). to return to a non-conducting state, the current through the device must fall below the i sb (approximately <50ma) and the voltage must fall below the v sb (normally 2.8 volts for a 3.3v device). if a 3.3v tvs is connected to 3.3v dc source, it will never fall below the snap-back voltage of 2.8v and will therefore stay in a conducting state.
5 ? 2008 semtech corp. www.semtech.com protection products UCLAMP3301P figure 1 - UCLAMP3301P spice model applications information - spice model s r e t e m a r a p e c i p s p 1 0 3 3 p m a l c - 1 e l b a t r e t e m a r a pt i n u) s v t ( 1 d) d r c l ( 2 d s ip m a0 2 - e 0 0 . 10 2 - e 0 0 . 1 v bt l o v3 . 38 j vt l o v4 19 6 . 0 s rm h o2 8 4 . 08 9 8 . 0 v b ip m a3 - e 0 . 13 - e 0 . 1 o j cd a r a f2 1 - e 4 12 1 - e 7 t tc e s9 - e 1 4 5 . 29 - e 1 4 5 . 2 m- -5 5 1 . 05 5 1 . 0 n- -1 . 11 . 1 g ev e1 1 . 11 1 . 1
6 ? 2008 semtech corp. www.semtech.com protection products UCLAMP3301P outline drawing - slp1006p2 land pattern - slp1006p2 inches .026 bsc aaa n e l e .008 .020 dim a min .018 .016 0.30 0.70 0.20 0.50 .003 2 .010 .024 .012 .028 0.08 2 0.25 0.60 0.65 bsc millimeters max 0.55 0.55 dimensions min 0.45 nom .020 .020 max .022 .022 nom 0.40 0.50 0.50 controlling dimensions are in millimeters (angles in degrees). notes: 1. bottom view top view a b c b aaa c seating plane bbb c a b d .035 .039 .043 0.90 1.10 1.00 .004 bbb 0.10 d e a1 a bxn e a1 .000 .001 .002 0.00 0.03 0.05 r 2x l pin 1 id r .002 .004 .006 0.05 0.10 0.15 this land pattern is for reference purposes only. consult your manufacturing group to ensure your notes: 2. dim y g c millimeters inches (0.85) .055 .012 .022 (.033) 1.40 0.55 0.30 dimensions company's manufacturing guidelines are met. z y (c) g z x .024 0.60 x 1. controlling dimensions are in millimeters (angles in degrees).
7 ? 2008 semtech corp. www.semtech.com protection products UCLAMP3301P marking code contact information semtech corporation protection products division 200 flynn road, camarillo, ca 93012 phone: (805)498-2111 fax (805)498-3804 ordering information r e b m u n t r a p g n i k r o w e g a t l o v r e p y t q l e e r l e e r e z i s t c t . p 1 0 3 3 p m a l c uv 3 . 30 0 0 , 3h c n i 7 tape and reel specification notes: 1) this is a lead-free, rohs/weee compliant product microclamp, uclamp and clamp are marks of semtech corporation e p a t h t d i w ) x a m ( , bd1 de f p0 p2 ptw m m 8 m m 2 . 4 ) 5 6 1 . ( m m 1 . 0 + 5 . 1 m m 0 . 0 - 5 0 0 . + 9 5 . 0 ( ) 0 0 0 . - m m 4 . 0 5 2 . 0 ) 1 3 0 . ( 0 1 . 0 5 7 . 1 m m ) 4 0 0 . 9 6 0 . ( 5 0 . 0 5 . 3 m m ) 2 0 0 . 8 3 1 . ( 0 1 . 0 0 . 4 m m - 0 0 . 7 5 1 . ( ) 4 1 . 0 0 . 4 m m - 0 0 . 7 5 1 . ( ) 4 5 0 . 0 0 . 2 m m ) 2 0 0 . 9 7 0 . ( 2 0 . 0 4 5 2 . 0 ) 6 1 0 . ( m m m m 0 . 8 m m 3 . 0 + m m 1 . 0 - ) 2 1 0 . 2 1 3 . ( 0 a0 b0 k m m 0 1 . 0 - / + 9 6 . 0m m 0 1 . 0 - / + 9 1 . 1m m 0 1 . 0 - / + 6 6 . 0 device orientation in tape pin 1 location user direction of feed 3p pin 1 id note: cathode bar at pin 2
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